feb.1999 mitsubishi semiconductor triac ? BCR20A, bcr20b, bcr20c, bcr20e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type application contactless ac switches, light dimmer, on/off control of traffic signals, on/off control of copier lamps, microwave ovens, solid state relay BCR20A, bcr20b, bcr20c, bcr20e ] 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature conditions unit a a a 2 s w w v a c c ratings 20 220 203 5.0 0.5 10 2.0 C20 ~ +125 C20 ~ +125 commercial frequency, sine full wave, 360 conduction BCR20A, b, c bcr20e t c =98 c t b =64 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current ?i t (rms) ...................................................................... 20a ?v drm ..............................................................400v/500v ?i fgt ! , i rgt ! , i rgt # ........................................... 30ma symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 600 12 500 700 2 1 3 f 2.0 min 1 3 3 max f 8.7 max 1
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t 1 terminal t 2 terminal gate terminal outline drawing dimensions in mm BCR20A f 11 max 9 max 24 max 17.5 max 2
feb.1999 mitsubishi semiconductor triac ? BCR20A, bcr20b, bcr20c, bcr20e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type maximum ratings (continue) conditions BCR20A bcr20b bcr20c bcr20e BCR20A only, 10 sec. bcr20c only bcr20e only, t a =25 c, ac 1 minute, t 2 terminal to base symbol v iso parameter weight (typical value) soldering temperature mounting torque isolated voltage ratings 3.5 9.0 9.0 11 230 30 2.94 1500 unit g c kgcm nm v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) r th (j-b) (dv/dt) c test conditions t j =125 c, v drm applied t c =25 c, t b =25 c (bcr20e only), i tm =30a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case (BCR20A, bcr20b, bcr20c) junction to base (bcr20e) unit ma v v v v ma ma ma v c/w c/w v/ m s typ. ! @ # ! @ # parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. limits min. 0.2 ] 3 max. 3.0 1.5 1.5 1.5 1.5 30 30 30 1.1 2.4 test conditions voltage class 8 10 v drm (v) 400 600 min. 10 10 commutating voltage and current waveforms (inductive load) (dv/dt) c symbol r l r l unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutat- ing current (di/dt) c =C10a/ms 3. peak off-state voltage v d =400v electrical characteristics supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
feb.1999 1 2 3 5.3 max ( f 16) 23?.2 f 33 max 2- f 3.2 min 20 max 21 max f 2.5 min f 2.0 min 1 2 3 f 8.7 max 1.8 max 1
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t 1 terminal t 2 terminal gate terminal outline drawing dimensions in mm bcr20b bcr20e bcr20c (16.2) 1 2 3 1.9 min 10 max f 2.0 min m6 1. 0 14 f 8.7 max 3 min 1 2 3 f 8.7 max 1.8 max 2- f 3.2 min 23?.2 33 max 20 max f 2.0 min 19 max 10.5 max 25.5 max 19.5 max 21 max 11 max 22.5 max 12 max 26 max 22 max mitsubishi semiconductor triac ? BCR20A, bcr20b, bcr20c, bcr20e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type 4.4 0.4 1.2 2.0 2.8 3.6 0.8 1.6 2.4 3.2 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t c = 25? t b = 25? 10 0 23 5710 1 80 40 23 5710 2 44 120 160 320 200 240 280 0 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 ? v gd = 0.2v p gm = 5.0w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) gate characteristics gate voltage (v) gate current (ma) 200 160 120 80 40 180 140 100 60 20 0 160 60 ?0 ?0 0 20 40 80 100 120 140 test procedure i , ii and iii gate trigger current gate trigger voltage gate trigger current voltage vs. junction temperature junction temperature (?) 100 (%) gate trigger ?current voltage ( t j = t c ) gate trigger ?current voltage ( t j = 25 ? ) performance curves
feb.1999 23 10 ? 5710 0 23 5 23 10 2 5710 3 710 1 23 5710 2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 23 10 ? 5710 0 23 5710 1 23 5710 2 2.4 2.0 1.6 1.2 0.8 0.4 0 2.8 3.2 23 10 2 5710 3 23 5710 4 23 5710 5 160 120 100 60 20 0 32 0 4162428 40 80 140 812 20 80 80 t2.0 160 160 t4.0 120 120 t3.0 all fins are black painted aluminum and greased curves apply regardless of conduction angle natural convection : mounting on fin with solder : mounting plate without grease 50 30 25 15 5 0 32 0 8162428 10 20 35 40 45 41220 360 conduction resistive, inductive loads 160 120 100 60 20 0 32 0 4162428 40 80 140 812 20 BCR20A, bcr20b, bcr20c bcr20e 360 conduction resistive, inductive loads curves apply regardless of conduction angle 160 120 100 60 20 0 32 0 4162428 40 80 140 812 20 80 80 t2.0 160 160 t4.0 120 120 t3.0 all fins are black painted aluminum and greased curves apply regardless of conduction angle natural convection : mounting on fin without grease : insulated plate with grease maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to base) (bcr20e) transient thermal impedance (?/ w) conduction time (cycles at 60hz) maximum transient thermal impedance characteristics (junction to case) (BCR20A, b, c) transient thermal impedance (?/ w) conduction time (cycles at 60hz) allowable ambient temperature vs. rms on-state current (BCR20A) ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current (bcr20b) ambient temperature (?) rms on-state current (a) allowable case temperature vs. rms on-state current base temperature (?) case temperature (?) rms on-state current (a) mitsubishi semiconductor triac ? BCR20A, bcr20b, bcr20c, bcr20e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type
feb.1999 allowable ambient temperature vs. rms on-state current (bcr20c) ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current (bcr20e) ambient temperature (?) rms on-state current (a) 160 120 100 60 20 0 32 0 4162428 40 80 140 812 20 80 80 t2.0 160 160 t4.0 120 120 t3.0 curves apply regardless of conduction angle all fins are black painted aluminum and greased resistive, inductive loads natural convection 160 120 100 60 20 0 32 0 4162428 40 80 140 812 20 80 80 t2.0 160 160 t4.0 120 120 t3.0 all fins are black painted aluminum and greased curves apply regardless of conduction angle natural convection : mounting on fin without grease : mica plate with grease mitsubishi semiconductor triac ? BCR20A, bcr20b, bcr20c, bcr20e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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